- The Institute of Industrial Science at the University of Tokyo builds a non-silicon transistor. The researcher built a cutting-edge transistor using gallium-doped indium oxide in these new-generation transistors. This structure is also called a gate-all-around structure. These types of transistors have remarkable electron mobility and stability.
This is the greatest invention of the 20th century. As we know, transistors are the basic part of modern electronics that are used for switching and amplifying. The electronic devices are becoming smaller with the passage of time, but with the silicone technology, it was very difficult to shrink more. With this invention, our electronics hit a wall. This breakthrough could give power to faster, more reliable electronics powering future technologies from AI to big data control systems.
Now researchers led by the Institute of Industrial Science have sought a solution and cleared all details in their new paper. They issue a 2-26 symposium on VLSI tech and circuits. The team ditched the silicon and instead opted to create a transistor with new gallium-doped indium oxide. This new invention material can be structured as a crystalline oxide. The team got to work to achieve these goals. The researchers know that they will need to introduce impurities to the indium oxide by doping it with gallium.
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